NTB5412NT4G PDF and Equivalents Search

 

NTB5412NT4G Specs and Replacement

Type Designator: NTB5412NT4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: D2PAK

NTB5412NT4G substitution

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NTB5412NT4G datasheet

 8.1. Size:139K  onsemi
ntb5411nt4g ntp5411ng.pdf pdf_icon

NTB5412NT4G

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 8.2. Size:143K  onsemi
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NTB5412NT4G

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 9.1. Size:128K  onsemi
ntb5404n ntp5404n.pdf pdf_icon

NTB5412NT4G

NTB5404N, NTP5404N Power MOSFET 40 V, 136 A, Single N-Channel, D2PAK & TO-220 Features Low RDS(on) http //onsemi.com High Current Capability ID MAX Low Gate Charge V(BR)DSS RDS(ON) TYP (Note 1) This is a Pb-Free Device 40 V 3.5 mW @ 10 V 136 A Applications D Electronic Brake Systems Electronic Power Steering N-Channel Bridge Circuits G MAXIMUM RATI... See More ⇒

Detailed specifications: NTB35N15G, NTB4302, NTB45N06G, NTB45N06LG, NTB52N10G, NTB5404NT4G, NTB5405NG, NTB5411NT4G, 2N60, NTB5426NT4G, NTB5605PG, NTB5860N, NTB5860NL, NTB60N06G, NTB60N06L, NTB6410ANG, NTB6411ANG

Keywords - NTB5412NT4G MOSFET specs

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