NTB5412NT4G Specs and Replacement
Type Designator: NTB5412NT4G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: D2PAK
NTB5412NT4G substitution
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NTB5412NT4G datasheet
ntb5404n ntp5404n.pdf
NTB5404N, NTP5404N Power MOSFET 40 V, 136 A, Single N-Channel, D2PAK & TO-220 Features Low RDS(on) http //onsemi.com High Current Capability ID MAX Low Gate Charge V(BR)DSS RDS(ON) TYP (Note 1) This is a Pb-Free Device 40 V 3.5 mW @ 10 V 136 A Applications D Electronic Brake Systems Electronic Power Steering N-Channel Bridge Circuits G MAXIMUM RATI... See More ⇒
Detailed specifications: NTB35N15G, NTB4302, NTB45N06G, NTB45N06LG, NTB52N10G, NTB5404NT4G, NTB5405NG, NTB5411NT4G, 2N60, NTB5426NT4G, NTB5605PG, NTB5860N, NTB5860NL, NTB60N06G, NTB60N06L, NTB6410ANG, NTB6411ANG
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