NTD2955G Todos los transistores

 

NTD2955G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD2955G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: DPAK

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NTD2955G datasheet

 ..1. Size:114K  onsemi
 ntd2955-1g ntd2955g.pdf pdf_icon

NTD2955G

NTD2955, NTD2955P, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power V(BR)DSS RDS(on) TYP ID MAX motor controls. These devices are particularly well suited for bridge -60 V

 7.1. Size:68K  onsemi
 ntd2955.pdf pdf_icon

NTD2955G

NTD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
 ntd2955-p.pdf pdf_icon

NTD2955G

NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating

 7.3. Size:98K  onsemi
 ntd2955 nvd2955.pdf pdf_icon

NTD2955G

NTD2955, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating sa

MOSTRAR MÁS

Otros transistores... NTD20P06LT4G , NTD23N03R , NTD24N06-001 , NTD24N06G , NTD24N06LG , NTD25P03L1 , NTD25P03LRLG , NTD2955-1G , P55NF06 , NTD3055-094-1 , NTD3055-094-1G , NTD3055-150T4 , NTD3055L104T4G , NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 .

History: UPA2211T1M | PT542BA | SUM90N08-6M2P | PZD502CYB | AOK18N65

 

 

 

 

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