NTD2955G - описание и поиск аналогов

 

NTD2955G. Аналоги и основные параметры

Наименование производителя: NTD2955G

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 55 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: DPAK

Аналог (замена) для NTD2955G

- подборⓘ MOSFET транзистора по параметрам

 

NTD2955G даташит

 ..1. Size:114K  onsemi
 ntd2955-1g ntd2955g.pdf pdf_icon

NTD2955G

NTD2955, NTD2955P, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power V(BR)DSS RDS(on) TYP ID MAX motor controls. These devices are particularly well suited for bridge -60 V

 7.1. Size:68K  onsemi
 ntd2955.pdf pdf_icon

NTD2955G

NTD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
 ntd2955-p.pdf pdf_icon

NTD2955G

NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating

 7.3. Size:98K  onsemi
 ntd2955 nvd2955.pdf pdf_icon

NTD2955G

NTD2955, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating sa

ПОКАЗАТЬ ЕЩЁ

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History: SVSP11N70SD2 | APT12067B2LL | PZD502CMA

 

 

 

 

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