Справочник MOSFET. NTD2955G

 

NTD2955G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD2955G
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: DPAK
 

 Аналог (замена) для NTD2955G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTD2955G Datasheet (PDF)

 ..1. Size:114K  onsemi
ntd2955-1g ntd2955g.pdfpdf_icon

NTD2955G

NTD2955, NTD2955P,NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerV(BR)DSS RDS(on) TYP ID MAXmotor controls. These devices are particularly well suited for bridge-60 V

 7.1. Size:68K  onsemi
ntd2955.pdfpdf_icon

NTD2955G

NTD2955Power MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
ntd2955-p.pdfpdf_icon

NTD2955G

NTD2955, NTD2955PPower MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating

 7.3. Size:98K  onsemi
ntd2955 nvd2955.pdfpdf_icon

NTD2955G

NTD2955, NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating sa

Другие MOSFET... NTD20P06LT4G , NTD23N03R , NTD24N06-001 , NTD24N06G , NTD24N06LG , NTD25P03L1 , NTD25P03LRLG , NTD2955-1G , IRFB4115 , NTD3055-094-1 , NTD3055-094-1G , NTD3055-150T4 , NTD3055L104T4G , NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 .

History: WMO13P06T1 | SD8901CY | 2SJ465

 

 
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