All MOSFET. NTD2955G Datasheet

 

NTD2955G Datasheet and Replacement


   Type Designator: NTD2955G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: DPAK
 

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NTD2955G Datasheet (PDF)

 ..1. Size:114K  onsemi
 ntd2955-1g ntd2955g.pdf pdf_icon

NTD2955G

NTD2955, NTD2955P,NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerV(BR)DSS RDS(on) TYP ID MAXmotor controls. These devices are particularly well suited for bridge-60 V

 7.1. Size:68K  onsemi
 ntd2955.pdf pdf_icon

NTD2955G

NTD2955Power MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe opera

 7.2. Size:92K  onsemi
 ntd2955-p.pdf pdf_icon

NTD2955G

NTD2955, NTD2955PPower MOSFET -60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating

 7.3. Size:98K  onsemi
 ntd2955 nvd2955.pdf pdf_icon

NTD2955G

NTD2955, NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating sa

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Datasheet: NTD20P06LT4G , NTD23N03R , NTD24N06-001 , NTD24N06G , NTD24N06LG , NTD25P03L1 , NTD25P03LRLG , NTD2955-1G , IRFB4115 , NTD3055-094-1 , NTD3055-094-1G , NTD3055-150T4 , NTD3055L104T4G , NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 .

History: TK56A12N1 | HRLD250N10K | TK56E12N1 | MTM12P05 | SQM120P06-07L | DM12N65C-2 | SUB75P03-07

Keywords - NTD2955G MOSFET datasheet

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