NTD3817N-1G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTD3817N-1G datasheet

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NTD3817N Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 13.9 mW @ 10 V 16 V 34.5 A Applicat

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NTD3813N Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 8.75 mW @ 10 V 16 V 51 A Applications

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NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 5.8 mW @ 10 V 16 V 76 A Applications 8.5 mW @ 4.5 V DC-DC Con

Otros transistores... NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 , NTD32N06L , NTD32N06LG , NTD3808N-1G , NTD3813N-1G , AO3401 , NTD40N03R-1G , NTD40N03RG , NTD4302-1G , NTD4804N-1G , NTD4804NA-1G , NTD4805N-1G , NTD4805NT4G , NTD4806N-1G .