NTD3817N-1G - параметры транзистора MOSFET, его аналоги, datasheet

NTD3817N-1G Datasheet (PDF)

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NTD3817NPower MOSFET16 V, 34.5 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices13.9 mW @ 10 V16 V34.5 AApplicat

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NTD3813NPower MOSFET16 V, 51 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices8.75 mW @ 10 V16 V51 AApplications

9.1. Size:93K onsemi
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NTD3808NPower MOSFET16 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.8 mW @ 10 V16 V76 AApplications8.5 mW @ 4.5 V DC-DC Con

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .