NTD3817N-1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD3817N-1G
Marking Code: 3817N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 34.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 257 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0139 Ohm
Package: DPAK IPAK
NTD3817N-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD3817N-1G Datasheet (PDF)
ntd3817n-1g.pdf
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ntd3813n-1g.pdf
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ntd3808n-1g.pdf
NTD3808NPower MOSFET16 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.8 mW @ 10 V16 V76 AApplications8.5 mW @ 4.5 V DC-DC Con
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STD12N06LT4
History: STD12N06LT4
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