NTD4815NH-1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4815NH-1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.6 nS
Cossⓘ - Capacitancia de salida: 183 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Búsqueda de reemplazo de NTD4815NH-1G MOSFET
- Selecciónⓘ de transistores por parámetros
NTD4815NH-1G datasheet
ntd4815nh-1g ntd4815nh-d.pdf
NTD4815NH Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 15 m @10V 30 V 35 A Applications 27.7 m @4.5 V CPU Power Delivery
ntd4815n-1g ntd4815nt4g.pdf
NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815N V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @
ntd4815n.pdf
NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 15 mW @ 10 V 30 V 35 A CPU Power Delivery 25 mW @ 4.5 V DC-DC Conve
ntd4810n-1g nvd4810n.pdf
NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @
Otros transistores... NTD4809N-1G , NTD4809NA-1G , NTD4809NH-1G , NTD4810N-1G , NTD4810NH-1G , NTD4813N-1G , NTD4813NH-1G , NTD4815N-1G , AON7506 , NTD4815NT4G , NTD4854N-1G , NTD4855N-1G , NTD4856N-1G , NTD4857N-1G , NTD4858N-1G , NTD4860N-1G , NTD4863N-1G .
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