NTD4815NH-1G - Даташиты. Аналоги. Основные параметры
Наименование производителя: NTD4815NH-1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 32.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 17.6 ns
Cossⓘ - Выходная емкость: 183 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: DPAK IPAK
Аналог (замена) для NTD4815NH-1G
NTD4815NH-1G Datasheet (PDF)
ntd4815nh-1g ntd4815nh-d.pdf

NTD4815NHPower MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices15 m @10V30 V35 AApplications27.7 m @4.5 V CPU Power Delivery
ntd4815n-1g ntd4815nt4g.pdf

NTD4815N, NVD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815NV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @
ntd4815n.pdf

NTD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications 15 mW @ 10 V30 V35 A CPU Power Delivery25 mW @ 4.5 V DC-DC Conve
ntd4810n-1g nvd4810n.pdf

NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @
Другие MOSFET... NTD4809N-1G , NTD4809NA-1G , NTD4809NH-1G , NTD4810N-1G , NTD4810NH-1G , NTD4813N-1G , NTD4813NH-1G , NTD4815N-1G , IRFP250 , NTD4815NT4G , NTD4854N-1G , NTD4855N-1G , NTD4856N-1G , NTD4857N-1G , NTD4858N-1G , NTD4860N-1G , NTD4863N-1G .
History: AOC2401 | NP48N055KHE | SQ3987EV | GP1M006A065XX | 2SK3309K | AFN3414S
History: AOC2401 | NP48N055KHE | SQ3987EV | GP1M006A065XX | 2SK3309K | AFN3414S



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