All MOSFET. NTD4815NH-1G Datasheet

 

NTD4815NH-1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD4815NH-1G
   Marking Code: 4815NH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DPAK IPAK

 NTD4815NH-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD4815NH-1G Datasheet (PDF)

 ..1. Size:290K  onsemi
 ntd4815nh-1g ntd4815nh-d.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4815NHPower MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices15 m @10V30 V35 AApplications27.7 m @4.5 V CPU Power Delivery

 6.1. Size:153K  onsemi
 ntd4815n-1g ntd4815nt4g.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4815N, NVD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815NV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @

 6.2. Size:125K  onsemi
 ntd4815n.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications 15 mW @ 10 V30 V35 A CPU Power Delivery25 mW @ 4.5 V DC-DC Conve

 8.1. Size:148K  onsemi
 ntd4810n-1g nvd4810n.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @

 8.2. Size:294K  onsemi
 ntd4810n-d.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4810NPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 m @10V30 V 54 A CPU Power Delivery15.7 m @4.5 V DC--DC C

 8.3. Size:897K  onsemi
 ntd4813nh nvd4813nh.pdf

NTD4815NH-1G NTD4815NH-1G

 8.4. Size:302K  onsemi
 ntd4813n-1g ntd4813n-d.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4813NPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications13 m @10V CPU Power Delivery30 V40 A24 m @4.5 V DC--DC Co

 8.5. Size:140K  onsemi
 ntd4813nh-1g.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4813NH, NVD4813NHPower MOSFET30 V, 40 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices are Pb-Free and are RoHS Comp

 8.6. Size:294K  onsemi
 ntd4813nh-d.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4813NHPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices13 m @10VApplications30 V40 A25.9 m @4.5 V CPU Power Delivery

 8.7. Size:284K  onsemi
 ntd4810nh-1g.pdf

NTD4815NH-1G NTD4815NH-1G

NTD4810NHPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low RG10 m @10V30 V 54 A These are Pb--Free Devices16.7 m @4.5 VApplicationsD CPU Power Delive

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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