NTD4960N-1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4960N-1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35.71 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 342 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Búsqueda de reemplazo de NTD4960N-1G MOSFET
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NTD4960N-1G datasheet
ntd4960n-1g.pdf
NTD4960N Power MOSFET 30 V, 55 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 8.0
ntd4963ng.pdf
NTD4963N Power MOSFET 30 V, 44 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.6
ntd4969n-d.pdf
NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0
ntd4969n-1g.pdf
NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0
Otros transistores... NTD4857N-1G , NTD4858N-1G , NTD4860N-1G , NTD4863N-1G , NTD4865N-1G , NTD4904N-1G , NTD4909N-1G , NTD4910N-1G , SI2302 , NTD4963N-1G , NTD4965N-1G , NTD4969N-1G , NTD4970N-1G , NTD50N03R , NTD5406NG , NTD5407NG , NTD5413NT4G .
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