NTD4960N-1G Specs and Replacement
Type Designator: NTD4960N-1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35.71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 342 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
NTD4960N-1G substitution
- MOSFET ⓘ Cross-Reference Search
NTD4960N-1G datasheet
ntd4960n-1g.pdf
NTD4960N Power MOSFET 30 V, 55 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 8.0 ... See More ⇒
ntd4963ng.pdf
NTD4963N Power MOSFET 30 V, 44 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.6 ... See More ⇒
ntd4969n-d.pdf
NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒
ntd4969n-1g.pdf
NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒
Detailed specifications: NTD4857N-1G, NTD4858N-1G, NTD4860N-1G, NTD4863N-1G, NTD4865N-1G, NTD4904N-1G, NTD4909N-1G, NTD4910N-1G, SI2302, NTD4963N-1G, NTD4965N-1G, NTD4969N-1G, NTD4970N-1G, NTD50N03R, NTD5406NG, NTD5407NG, NTD5413NT4G
Keywords - NTD4960N-1G MOSFET specs
NTD4960N-1G cross reference
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