NTD6415AN-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTD6415AN-1G
   Código: 6415AN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: IPAK

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NTD6415AN-1G Datasheet (PDF)

..1. Size:139K onsemi
ntd6415an-1g.pdf

NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6415ANID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 55 mW @ 10 V 23 AParameter Symbol Value

5.1. Size:259K onsemi
ntd6415anl-d.pdf

NTD6415ANLN--Channel Power MOSFET100 V, 23 A, 56 m, LogicLevelFeatures Low RDS(on)http://onsemi.com 100% Avalanche Tested AEC--Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant56 m @4.5 V100 V 23 A52 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted)Parameter Symbol Value Uni

5.2. Size:138K onsemi
ntd6415an.pdf

NTD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantID MAXV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value Unit100 V 55 mW @ 10 V 23 ADrain-to-Source Voltage VDSS 100 VGate

5.3. Size:72K onsemi
ntd6415anl nvd6415anl.pdf

NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS

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