NTD6415AN-1G PDF and Equivalents Search

 

NTD6415AN-1G Specs and Replacement

Type Designator: NTD6415AN-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: IPAK

NTD6415AN-1G substitution

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NTD6415AN-1G datasheet

 ..1. Size:139K  onsemi
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NTD6415AN-1G

NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6415AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 55 mW @ 10 V 23 A Parameter Symbol Value... See More ⇒

 5.1. Size:259K  onsemi
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NTD6415AN-1G

NTD6415ANL N--Channel Power MOSFET 100 V, 23 A, 56 m , Logic Level Features Low RDS(on) http //onsemi.com 100% Avalanche Tested AEC--Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 56 m @4.5 V 100 V 23 A 52 m @10V MAXIMUM RATINGS (TJ =25 C unless otherwise noted) Parameter Symbol Value Uni... See More ⇒

 5.2. Size:138K  onsemi
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NTD6415AN-1G

NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant ID MAX V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit 100 V 55 mW @ 10 V 23 A Drain-to-Source Voltage VDSS 100 V Gate... See More ⇒

 5.3. Size:72K  onsemi
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NTD6415AN-1G

NTD6415ANL, NVD6415ANL N-Channel Power MOSFET 100 V, 23 A, 56 mW, Logic Level Features Low RDS(on) www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 56 mW @ 4.5 V 100 V 23 A These Devices are Pb-Free and are RoHS... See More ⇒

Detailed specifications: UFZ24NL-TM3, UFZ24NL-TN3, NTD5865N-1G, NTD5867NL-1G, NTD60N02R, NTD60N02R-035, NTD60N03-001, NTD6414AN-1G, IRLZ44N, NTD6416AN-1G, NTD65N03R, NTD65N03R-035, NTD65N03R-1G, NTD6600N, NTD70N03R-001, NTD70N03RG, NTD78N03

Keywords - NTD6415AN-1G MOSFET specs

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