All MOSFET. NTD6415AN-1G Datasheet

 

NTD6415AN-1G Datasheet and Replacement


   Type Designator: NTD6415AN-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: IPAK
 

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NTD6415AN-1G Datasheet (PDF)

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NTD6415AN-1G

NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6415ANID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 55 mW @ 10 V 23 AParameter Symbol Value

 5.1. Size:259K  onsemi
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NTD6415AN-1G

NTD6415ANLN--Channel Power MOSFET100 V, 23 A, 56 m, LogicLevelFeatures Low RDS(on)http://onsemi.com 100% Avalanche Tested AEC--Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant56 m @4.5 V100 V 23 A52 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted)Parameter Symbol Value Uni

 5.2. Size:138K  onsemi
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NTD6415AN-1G

NTD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantID MAXV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value Unit100 V 55 mW @ 10 V 23 ADrain-to-Source Voltage VDSS 100 VGate

 5.3. Size:72K  onsemi
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NTD6415AN-1G

NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS

Datasheet: UFZ24NL-TM3 , UFZ24NL-TN3 , NTD5865N-1G , NTD5867NL-1G , NTD60N02R , NTD60N02R-035 , NTD60N03-001 , NTD6414AN-1G , IRFP260N , NTD6416AN-1G , NTD65N03R , NTD65N03R-035 , NTD65N03R-1G , NTD6600N , NTD70N03R-001 , NTD70N03RG , NTD78N03 .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

Keywords - NTD6415AN-1G MOSFET datasheet

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