NTDV20P06L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTDV20P06L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 207 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: DPAK
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NTDV20P06L Datasheet (PDF)
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf

NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir
ntd20p06l ntdv20p06l.pdf

NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge
ntd20n06l ntdv20n06l.pdf

NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inwww.onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli
ntdv20n06.pdf

NTD20N06, NTDV20N06Power MOSFET20 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSDN
Otros transistores... NTD85N02R-1G , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , AO3400 , NTDV3055L104 , NTDV5804N , NTF2955PT1G , NTF2955T1G , NTF3055-100T1 , NTF3055-160T1 , NTF3055-160T3LF , NTF3055L108T1G .
History: AON7764 | HTD2K1P10 | SQM120N06-04L | 2SK2022-01M | TK20E60W5 | PTP13N50B
History: AON7764 | HTD2K1P10 | SQM120N06-04L | 2SK2022-01M | TK20E60W5 | PTP13N50B



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