NTDV20P06L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTDV20P06L  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 207 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: DPAK

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NTDV20P06L datasheet

 ..1. Size:146K  onsemi
 ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf pdf_icon

NTDV20P06L

NTD20P06L, NTDV20P06L Power MOSFET -60 V, -15.5 A, Single P-Channel, DPAK Features Withstands High Energy in Avalanche and Commutation Modes http //onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06L ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP (Note 1) Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir

 ..2. Size:139K  onsemi
 ntd20p06l ntdv20p06l.pdf pdf_icon

NTDV20P06L

NTD20P06L, NTDV20P06L MOSFET Power, Single, P-Channel, DPAK -60 V, -15.5 A Features www.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching ID MAX AEC Q101 Qualified - NTDV20P06L V(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant -60 V 130 mW @ -5.0 V -15.5 A Applications Bridge

 8.1. Size:89K  onsemi
 ntd20n06l ntdv20n06l.pdf pdf_icon

NTDV20P06L

NTD20N06L, NTDV20N06L Power MOSFET 20 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in www.onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli

 8.2. Size:111K  onsemi
 ntdv20n06.pdf pdf_icon

NTDV20P06L

NTD20N06, NTDV20N06 Power MOSFET 20 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http //onsemi.com Lower RDS(on) Lower VDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances 60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSD N

MOSTRAR MÁS

Otros transistores... NTD85N02R-1G, NTD85N02RT4, NTD95N02R, NTD95N02R-1G, NTD95N02RT4, NTDV18N06LT4G, NTDV20N06, NTDV20N06L, BS170, NTDV3055L104, NTDV5804N, NTF2955PT1G, NTF2955T1G, NTF3055-100T1, NTF3055-160T1, NTF3055-160T3LF, NTF3055L108T1G