Справочник MOSFET. NTDV20P06L

 

NTDV20P06L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTDV20P06L
   Маркировка: 20P06L
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 65 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 15.5 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 15 nC
   Время нарастания (tr): 90 ns
   Выходная емкость (Cd): 207 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NTDV20P06L

 

 

NTDV20P06L Datasheet (PDF)

 ..1. Size:146K  onsemi
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf

NTDV20P06L NTDV20P06L

NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir

 ..2. Size:139K  onsemi
ntd20p06l ntdv20p06l.pdf

NTDV20P06L NTDV20P06L

NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge

 8.1. Size:89K  onsemi
ntd20n06l ntdv20n06l.pdf

NTDV20P06L NTDV20P06L

NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inwww.onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli

 8.2. Size:111K  onsemi
ntdv20n06.pdf

NTDV20P06L NTDV20P06L

NTD20N06, NTDV20N06Power MOSFET20 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSDN

 8.3. Size:118K  onsemi
ntdv20n06l.pdf

NTDV20P06L NTDV20P06L

NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Com

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top