NTDV20P06L
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTDV20P06L
Marking Code: 20P06L
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 15.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 90
nS
Cossⓘ -
Output Capacitance: 207
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
DPAK
NTDV20P06L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTDV20P06L
Datasheet (PDF)
..1. Size:146K onsemi
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf
NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir
..2. Size:139K onsemi
ntd20p06l ntdv20p06l.pdf
NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge
8.1. Size:89K onsemi
ntd20n06l ntdv20n06l.pdf
NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inwww.onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli
8.2. Size:111K onsemi
ntdv20n06.pdf
NTD20N06, NTDV20N06Power MOSFET20 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSDN
8.3. Size:118K onsemi
ntdv20n06l.pdf
NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Com
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