NTGD3147FT1G Todos los transistores

 

NTGD3147FT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTGD3147FT1G

Código: TC

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.5 V

Carga de compuerta (Qg): 3.8 nC

Tiempo de elevación (tr): 6.2 nS

Conductancia de drenaje-sustrato (Cd): 75 pF

Resistencia drenaje-fuente RDS(on): 0.145 Ohm

Empaquetado / Estuche: TSOP6

Búsqueda de reemplazo de MOSFET NTGD3147FT1G

 

NTGD3147FT1G Datasheet (PDF)

1.1. ntgd3147ft1g.pdf Size:109K _update-mosfet

NTGD3147FT1G
NTGD3147FT1G

NTGD3147F Power MOSFET and Schottky Diode -20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com • Fast Switching P-CHANNEL MOSFET • Low Gate Change V(BR)DSS RDS(on) Max ID Max • Low RDS(on) 145 mW @ -4.5 V -2.2 A • Low VF Schottky Diode -20 V • Independently Connected Devices to Provide Design Flexibility 200 mW @ -2.5 V -1.6 A •

1.2. ntgd3147f.pdf Size:109K _onsemi

NTGD3147FT1G
NTGD3147FT1G

NTGD3147F Power MOSFET and Schottky Diode -20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 145 mW @ -4.5 V -2.2 A Low VF Schottky Diode -20 V Independently Connected Devices to Provide Design Flexibility 200 mW @ -2.5 V -1.6 A This is a Pb-Fr

 3.1. ntgd3148nt1g.pdf Size:76K _update-mosfet

NTGD3147FT1G
NTGD3147FT1G

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features • Low Threshold Levels, VGS(th) < 1.5 V http://onsemi.com • Low Gate Charge (3.8 nC) • Leading Edge Trench Technology of Low RDS(on) N-CHANNEL MOSFET • High Power and Current Handling Capability V(BR)DSS RDS(on) Max ID Max • This is a Pb-Free Device 70 mW @ 4.5 V 20 V 3.5 A Applications 100 mW @ 2.5 V

3.2. ntgd3148n-d.pdf Size:76K _onsemi

NTGD3147FT1G
NTGD3147FT1G

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features Low Threshold Levels, VGS(th) < 1.5 V http://onsemi.com Low Gate Charge (3.8 nC) Leading Edge Trench Technology of Low RDS(on) N-CHANNEL MOSFET High Power and Current Handling Capability V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 70 mW @ 4.5 V 20 V 3.5 A Applications 100 mW @ 2.5 V DC-DC Con

 3.3. ntgd3149c.pdf Size:120K _onsemi

NTGD3147FT1G
NTGD3147FT1G

NTGD3149C Power MOSFET Complementary, 20 V, +3.5/-2.7 A, TSOP-6 Dual Features Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response 60 mW @ 4.5 V N-Ch Independently Connected Devices to

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top

 


NTGD3147FT1G
  NTGD3147FT1G
  NTGD3147FT1G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |

 

 

 
Back to Top