All MOSFET. NTGD3147FT1G Datasheet

 

NTGD3147FT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTGD3147FT1G
   Marking Code: TC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.8 nC
   trⓘ - Rise Time: 6.2 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TSOP6

 NTGD3147FT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTGD3147FT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
 ntgd3147f ntgd3147ft1g.pdf

NTGD3147FT1G NTGD3147FT1G

NTGD3147FPower MOSFET andSchottky Diode-20 V, -2.5 A, P-Channel with SchottkyBarrier Diode, TSOP-6Featureshttp://onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate ChangeV(BR)DSS RDS(on) MaxID Max Low RDS(on)145 mW @ -4.5 V -2.2 A Low VF Schottky Diode-20 V Independently Connected Devices to Provide Design Flexibility200 mW @ -2.5 V -1.6 A

 7.1. Size:120K  onsemi
 ntgd3149c.pdf

NTGD3147FT1G NTGD3147FT1G

NTGD3149CPower MOSFETComplementary, 20 V, +3.5/-2.7 A,TSOP-6 DualFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On ResistanceV(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response60 mW @ 4.5 VN-Ch Independently Connecte

 7.2. Size:76K  onsemi
 ntgd3148n-d ntgd3148nt1g.pdf

NTGD3147FT1G NTGD3147FT1G

NTGD3148NPower MOSFET20 V, 3.5 A, Dual N-Channel, TSOP-6Features Low Threshold Levels, VGS(th)

 7.3. Size:1766K  cn vbsemi
 ntgd3148nt1g.pdf

NTGD3147FT1G NTGD3147FT1G

NTGD3148NT1Gwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AF4502CSLA | IRFP4768

 

 
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