NTGD3147FT1G - аналоги, параметры транзистора

NTGD3147FT1G технические параметры

..1. Size:109K onsemi
ntgd3147f ntgd3147ft1g.pdf pdf_icon

NTGD3147F Power MOSFET and Schottky Diode -20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6 Features http //onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 145 mW @ -4.5 V -2.2 A Low VF Schottky Diode -20 V Independently Connected Devices to Provide Design Flexibility 200 mW @ -2.5 V -1.6 A

7.1. Size:120K onsemi
ntgd3149c.pdf pdf_icon

NTGD3149C Power MOSFET Complementary, 20 V, +3.5/-2.7 A, TSOP-6 Dual Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response 60 mW @ 4.5 V N-Ch Independently Connecte

7.2. Size:76K onsemi
ntgd3148n-d ntgd3148nt1g.pdf pdf_icon

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features Low Threshold Levels, VGS(th)

7.3. Size:1766K cn vbsemi
ntgd3148nt1g.pdf pdf_icon

NTGD3148NT1G www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6

Другие MOSFET... NTF2955T1G , NTF3055-100T1 , NTF3055-160T1 , NTF3055-160T3LF , NTF3055L108T1G , NTF3055L175T1G , NTF5P03 , NTF6P02T3G , IRFB3607 , NTGD3148NT1G , 2SK1085-M , 2SK1969-01 , 2SK2258 , 2SK2753 , 2SK3262 , 2SK428 , 30N50 .