FCP190N65S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP190N65S3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 144 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FCP190N65S3 MOSFET
FCP190N65S3 Datasheet (PDF)
fcp190n65s3.pdf

FCP190N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 190 mW @ 10 V 17 Acharge performance. This advanc
fcp190n65s3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP190N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXI
fcp190n65s3r0.pdf

FCP190N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor
fcp190n65f.pdf

August 2014FCP190N65FN-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)
Otros transistores... AM30N10 , AOD2144 , BUK437-500B , BUK637-500B , CSD30N30 , FCH067N65S3 , FCP067N65S3 , FCP099N65S3 , IRFZ46N , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , FDD9407 , FMP60N280S2HF , IPA032N06N3 , IPA041N04N , IPA057N06N3 .
History: AP10N4R5S | CSFR3N60LP
History: AP10N4R5S | CSFR3N60LP



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet | p75nf75 mosfet