FCP190N65S3 PDF and Equivalents Search

 

FCP190N65S3 Specs and Replacement

Type Designator: FCP190N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

FCP190N65S3 substitution

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FCP190N65S3 datasheet

 ..1. Size:373K  onsemi
fcp190n65s3.pdf pdf_icon

FCP190N65S3

FCP190N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 17 A charge performance. This advanc... See More ⇒

 ..2. Size:207K  inchange semiconductor
fcp190n65s3.pdf pdf_icon

FCP190N65S3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP190N65S3 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXI... See More ⇒

 0.1. Size:357K  onsemi
fcp190n65s3r0.pdf pdf_icon

FCP190N65S3

FCP190N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor... See More ⇒

 5.1. Size:998K  fairchild semi
fcp190n65f.pdf pdf_icon

FCP190N65S3

August 2014 FCP190N65F N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC) ... See More ⇒

Detailed specifications: AM30N10, AOD2144, BUK437-500B, BUK637-500B, CSD30N30, FCH067N65S3, FCP067N65S3, FCP099N65S3, SI2302, FCP290N80, FCPF125N65S3, FCPF400N80ZCN, FDD9407, FMP60N280S2HF, IPA032N06N3, IPA041N04N, IPA057N06N3

Keywords - FCP190N65S3 MOSFET specs

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