FCP190N65S3 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FCP190N65S3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 144 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 30 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO220
Аналог (замена) для FCP190N65S3
FCP190N65S3 Datasheet (PDF)
fcp190n65s3.pdf

FCP190N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 190 mW @ 10 V 17 Acharge performance. This advanc
fcp190n65s3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP190N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXI
fcp190n65s3r0.pdf

FCP190N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor
fcp190n65f.pdf

August 2014FCP190N65FN-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)
Другие MOSFET... AM30N10 , AOD2144 , BUK437-500B , BUK637-500B , CSD30N30 , FCH067N65S3 , FCP067N65S3 , FCP099N65S3 , 2N60 , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , FDD9407 , FMP60N280S2HF , IPA032N06N3 , IPA041N04N , IPA057N06N3 .
History: EV3407 | 2SK4076-ZK | DH012N03I | SMN0665FD | FTK6601 | S8045R | AOB450A70L
History: EV3407 | 2SK4076-ZK | DH012N03I | SMN0665FD | FTK6601 | S8045R | AOB450A70L



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