IRF3205STRLPBF Todos los transistores

 ..1. Size:206K  inchange semiconductor
 irf3205strlpbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205STRLPBF DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMU

 6.1. Size:280K  international rectifier
 irf3205spbf irf3205lpbf.pdf

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Descripti n Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t

 6.2. Size:280K  international rectifier
 irf3205lpbf irf3205spbf.pdf

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Descripti n Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t

 6.3. Size:160K  international rectifier
 irf3205s.pdf

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 8.0m G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- res

 6.4. Size:885K  cn minos
 irf3205s.pdf

60V N-Channel Power MOSFET DESCRIPTION The IRF3205S uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS V = 60V,I =120A DS D R

 6.5. Size:206K  inchange semiconductor
 irf3205s.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205S DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATI