IRF3205STRLPBF PDF and Equivalents Search

 

IRF3205STRLPBF Specs and Replacement


   Type Designator: IRF3205STRLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 781 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

 IRF3205STRLPBF substitution

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IRF3205STRLPBF datasheet

 ..1. Size:206K  inchange semiconductor
irf3205strlpbf.pdf pdf_icon

IRF3205STRLPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205STRLPBF DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMU... See More ⇒

 6.1. Size:280K  international rectifier
irf3205spbf irf3205lpbf.pdf pdf_icon

IRF3205STRLPBF

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Descripti n Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t... See More ⇒

 6.2. Size:280K  international rectifier
irf3205lpbf irf3205spbf.pdf pdf_icon

IRF3205STRLPBF

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Descripti n Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t... See More ⇒

 6.3. Size:160K  international rectifier
irf3205s.pdf pdf_icon

IRF3205STRLPBF

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 8.0m G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- res... See More ⇒

Detailed specifications: IPAN60R800CE , IPB073N15N5 , IPB090N06N3 , IPB156N22NFD , IPB60R280P6 , IPD30N03S2L , IPP60R060P7 , IPP60R070CFD7 , AOD4184A , IRF7473TRPBF , IRFI3306G , IRFI4228 , IRFI7440G , IRFI7446G , IRFI7536G , IRFIP054 , 2N7636-GA .

Keywords - IRF3205STRLPBF MOSFET specs

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