All MOSFET. IRF3205STRLPBF Datasheet

 

IRF3205STRLPBF Datasheet and Replacement


   Type Designator: IRF3205STRLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 146 nC
   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 781 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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IRF3205STRLPBF Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
 irf3205strlpbf.pdf pdf_icon

IRF3205STRLPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205STRLPBFDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMU

 6.1. Size:280K  international rectifier
 irf3205spbf irf3205lpbf.pdf pdf_icon

IRF3205STRLPBF

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 6.2. Size:280K  international rectifier
 irf3205lpbf irf3205spbf.pdf pdf_icon

IRF3205STRLPBF

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

 6.3. Size:160K  international rectifier
 irf3205s.pdf pdf_icon

IRF3205STRLPBF

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

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Keywords - IRF3205STRLPBF MOSFET datasheet

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