2SK1398 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1398
   Código: G25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.9 V
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm
   Paquete / Cubierta: SST

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2SK1398 Datasheet (PDF)

..1. Size:51K nec
2sk1398.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1398N-CHANNEL MOS FETFOR HIGH SPEED SWITCHINGDESCRIPTION ORDERING INFORMATION The 2SK1398 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for a high-speed switching device in digital circuits.2SK1398 SST The 2SK1398 is driven by a 2.5-V power source, it issuitable for applications including headphone stereoswhic

8.1. Size:46K nec
2sk1399.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1399N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1399 is an N-channel vertical type MOS FET which can be2.8 0.2driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration 1.5 0.65+0.10.15of driving current, it is suitable f

8.2. Size:778K kexin
2sk1399-3.pdf

SMD Type MOSFETN-Channel MOSFET2SK1399SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1Features3Can be driven by a 3.0-V power sourceNot necessary to consider driving current because of it is high inputimpedance1 2Possible to reduce the number of parts by omitting the bias resistor+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2Drain Complments the 2SJ185Intern

8.3. Size:749K kexin
2sk1399.pdf

SMD Type MOSFETN-Channel MOSFET2SK1399SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCan be driven by a 3.0-V power sourceNot necessary to consider driving current because of it is high input1 2impedance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Possible to reduce the number of parts by omitting the bias resistorDrain Complments the 2SJ1851. Gate

8.4. Size:1269K cn vbsemi
2sk1399.pdf

2SK1399www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

Otros transistores... 2SK1287 , 2SK1288 , 2SK1289 , 2SK1290 , 2SK1292 , 2SK1293 , 2SK1294 , 2SK1295 , AON7506 , 2SK1399 , 2SK1482 , 2SK1483 , 2SK1484 , 2SK1485 , 2SK1491 , 2SK1492 , 2SK1493 .

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