2SK1398
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1398
Marking Code: G25
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 20
Ohm
Package:
SST
2SK1398
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1398
Datasheet (PDF)
..1. Size:51K nec
2sk1398.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1398N-CHANNEL MOS FETFOR HIGH SPEED SWITCHINGDESCRIPTION ORDERING INFORMATION The 2SK1398 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for a high-speed switching device in digital circuits.2SK1398 SST The 2SK1398 is driven by a 2.5-V power source, it issuitable for applications including headphone stereoswhic
8.1. Size:46K nec
2sk1399.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1399N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1399 is an N-channel vertical type MOS FET which can be2.8 0.2driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration 1.5 0.65+0.10.15of driving current, it is suitable f
8.2. Size:778K kexin
2sk1399-3.pdf
SMD Type MOSFETN-Channel MOSFET2SK1399SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1Features3Can be driven by a 3.0-V power sourceNot necessary to consider driving current because of it is high inputimpedance1 2Possible to reduce the number of parts by omitting the bias resistor+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2Drain Complments the 2SJ185Intern
8.3. Size:749K kexin
2sk1399.pdf
SMD Type MOSFETN-Channel MOSFET2SK1399SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCan be driven by a 3.0-V power sourceNot necessary to consider driving current because of it is high input1 2impedance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Possible to reduce the number of parts by omitting the bias resistorDrain Complments the 2SJ1851. Gate
8.4. Size:1269K cn vbsemi
2sk1399.pdf
2SK1399www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1
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