2SK1398 - описание и поиск аналогов

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING DESCRIPTION ORDERING INFORMATION The 2SK1398 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for a high-speed switching device in digital circuits. 2SK1398 SST The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos whic

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1399 is an N-channel vertical type MOS FET which can be 2.8 0.2 driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration 1.5 0.65+0.1 0.15 of driving current, it is suitable f

SMD Type MOSFET N-Channel MOSFET 2SK1399 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 Can be driven by a 3.0-V power source Not necessary to consider driving current because of it is high input impedance 1 2 Possible to reduce the number of parts by omitting the bias resistor +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Drain Complments the 2SJ185 Intern

SMD Type MOSFET N-Channel MOSFET 2SK1399 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Can be driven by a 3.0-V power source Not necessary to consider driving current because of it is high input 1 2 impedance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Possible to reduce the number of parts by omitting the bias resistor Drain Complments the 2SJ185 1. Gate

2SK1399 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1