DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1398N-CHANNEL MOS FETFOR HIGH SPEED SWITCHINGDESCRIPTION ORDERING INFORMATION The 2SK1398 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for a high-speed switching device in digital circuits.2SK1398 SST The 2SK1398 is driven by a 2.5-V power source, it issuitable for applications including headphone stereoswhic

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1399N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1399 is an N-channel vertical type MOS FET which can be2.8 0.2driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration 1.5 0.65+0.10.15of driving current, it is suitable f

SMD Type MOSFETN-Channel MOSFET2SK1399SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1Features3Can be driven by a 3.0-V power sourceNot necessary to consider driving current because of it is high inputimpedance1 2Possible to reduce the number of parts by omitting the bias resistor+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2Drain Complments the 2SJ185Intern

SMD Type MOSFETN-Channel MOSFET2SK1399SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCan be driven by a 3.0-V power sourceNot necessary to consider driving current because of it is high input1 2impedance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Possible to reduce the number of parts by omitting the bias resistorDrain Complments the 2SJ1851. Gate

2SK1399www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1