2N7636-GA Todos los transistores

 

2N7636-GA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7636-GA
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 250 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.425 Ohm
   Paquete / Cubierta: TO-276AA
 

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2N7636-GA Datasheet (PDF)

 ..1. Size:462K  genesic
 2n7636-ga.pdf pdf_icon

2N7636-GA

2N7636-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea

 9.1. Size:845K  genesic
 2n7639-ga.pdf pdf_icon

2N7636-GA

2N7639-GANormally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 9.2. Size:467K  genesic
 2n7637-ga.pdf pdf_icon

2N7636-GA

2N7637-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 9.3. Size:504K  genesic
 2n7635-ga.pdf pdf_icon

2N7636-GA

2N7635-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po

MOSTRAR MÁS

Otros transistores... IRF3205STRLPBF , IRF7473TRPBF , IRFI3306G , IRFI4228 , IRFI7440G , IRFI7446G , IRFI7536G , IRFIP054 , IRF740 , 2N7637-GA , 2N7638-GA , 2N7639-GA , 2N7640-GA , IRFZ24NLPBF , 2N7635-GA , IRLB4132 , IRLI3705 .

History: GSM4822S | WMJ80R350S | FDB9403-F085

 

 
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