2N7636-GA JFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

2N7636-GA Specs and Replacement

   Type Designator: 2N7636-GA
   Type of Transistor: JFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 250 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.425 Ohm
   Package: TO-276AA

2N7636-GA substitution

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2N7636-GA datasheet

..1. Size:462K genesic
2n7636-ga.pdf pdf_icon

2N7636-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea... See More ⇒

9.1. Size:845K genesic
2n7639-ga.pdf pdf_icon

2N7639-GA Normally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G ... See More ⇒

9.2. Size:467K genesic
2n7637-ga.pdf pdf_icon

2N7637-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G ... See More ⇒

9.3. Size:504K genesic
2n7635-ga.pdf pdf_icon

2N7635-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po... See More ⇒