IRLB4132 Todos los transistores

 ..1. Size:246K  international rectifier
 irlb4132pbf.pdf

Approved (Not Released) PD - TBD IRLB4132PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l Low Voltage Power Tools 30V 3.5m 36nC Benefits D l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at 4.5V VGS S D l Ultra-Low Gate Impedance G l Fully Characterized Avalanche Voltage TO-220AB and Curr

 ..2. Size:242K  international rectifier
 irlb4132.pdf

Approved (Not Released) PD - TBD IRLB4132PbF HEXFET Power MOSFET Applications l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg l Low Voltage Power Tools 30V 3.5m 36nC Benefits D l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at 4.5V VGS S D l Ultra-Low Gate Impedance G l Fully Characterized Avalanche Voltage TO-220AB and Curr

 ..3. Size:206K  inchange semiconductor
 irlb4132.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB4132 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Low voltage power tools ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.1. Size:280K  international rectifier
 irlb4030pbf.pdf

PD - 97369 IRLB4030PbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 3.4m l Hard Switched and High Frequency Circuits G max. 4.3m ID 180A S Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superio

 9.2. Size:245K  inchange semiconductor
 irlb4030.pdf

isc N-Channel MOSFET Transistor IRLB4030 IIRLB4030 FEATURES Static drain-source on-resistance RDS(on) 4.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S