All MOSFET. IRLB4132 Datasheet

 

IRLB4132 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLB4132
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220C

 IRLB4132 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLB4132 Datasheet (PDF)

 ..1. Size:242K  international rectifier
 irlb4132.pdf

IRLB4132 IRLB4132

Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Curr

 ..2. Size:246K  infineon
 irlb4132pbf.pdf

IRLB4132 IRLB4132

Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Curr

 ..3. Size:206K  inchange semiconductor
 irlb4132.pdf

IRLB4132 IRLB4132

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB4132FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLow voltage power toolsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.1. Size:280K  international rectifier
 irlb4030pbf.pdf

IRLB4132 IRLB4132

PD - 97369IRLB4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.5V VGSl Superio

 9.2. Size:280K  infineon
 irlb4030pbf.pdf

IRLB4132 IRLB4132

PD - 97369IRLB4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.5V VGSl Superio

 9.3. Size:245K  inchange semiconductor
 irlb4030.pdf

IRLB4132 IRLB4132

isc N-Channel MOSFET Transistor IRLB4030IIRLB4030FEATURESStatic drain-source on-resistance:RDS(on) 4.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFP460

 

 
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