MMF60R360QTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF60R360QTH
Código: 60R360Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 41 nS
Conductancia de drenaje-sustrato (Cd): 715 pF
Resistencia entre drenaje y fuente RDS(on): 0.36 Ohm
Paquete / Cubierta: TO220F
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MMF60R360QTH Datasheet (PDF)
mmf60r360qth.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF60R360QTHFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersAdapterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
mmf60r360q.pdf
MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r360pth.pdf
MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r360pth.pdf
isc N-Channel MOSFET Transistor MMF60R360PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
