MMF60R360QTH. Аналоги и основные параметры
Наименование производителя: MMF60R360QTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 715 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO220F
Аналог (замена) для MMF60R360QTH
- подборⓘ MOSFET транзистора по параметрам
MMF60R360QTH даташит
mmf60r360qth.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R360QTH FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters Adapter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
mmf60r360q.pdf
MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r360pth.pdf
MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r360pth.pdf
isc N-Channel MOSFET Transistor MMF60R360PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
Другие MOSFET... IXFP12N65X2M , IXFP22N65X2M , IXTP24N65X2M , IXFP34N65X2 , MDE1932 , MDP10N055 , MDP1921 , MMD80R900P , P55NF06 , MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E .
History: AP9926GEO | MTP2N50 | AP99T03GS | MMF80R450PTH | 2SK2371 | IRFS440B | MMD80R1K2PRH
History: AP9926GEO | MTP2N50 | AP99T03GS | MMF80R450PTH | 2SK2371 | IRFS440B | MMD80R1K2PRH
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940


