MMF60R360QTH - описание и поиск аналогов

 

MMF60R360QTH. Аналоги и основные параметры

Наименование производителя: MMF60R360QTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 41 ns

Cossⓘ - Выходная емкость: 715 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm

Тип корпуса: TO220F

Аналог (замена) для MMF60R360QTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF60R360QTH даташит

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MMF60R360QTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R360QTH FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters Adapter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 4.1. Size:1324K  magnachip
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MMF60R360QTH

MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.1. Size:1268K  magnachip
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MMF60R360QTH

MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:279K  inchange semiconductor
mmf60r360pth.pdfpdf_icon

MMF60R360QTH

isc N-Channel MOSFET Transistor MMF60R360PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

Другие MOSFET... IXFP12N65X2M , IXFP22N65X2M , IXTP24N65X2M , IXFP34N65X2 , MDE1932 , MDP10N055 , MDP1921 , MMD80R900P , P55NF06 , MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E .

History: AP9926GEO | MTP2N50 | AP99T03GS | MMF80R450PTH | 2SK2371 | IRFS440B | MMD80R1K2PRH

 

 

 

 

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