All MOSFET. MMF60R360QTH Datasheet

 

MMF60R360QTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMF60R360QTH
   Marking Code: 60R360Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F

 MMF60R360QTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMF60R360QTH Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
 mmf60r360qth.pdf

MMF60R360QTH MMF60R360QTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF60R360QTHFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersAdapterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 4.1. Size:1324K  magnachip
 mmf60r360q.pdf

MMF60R360QTH MMF60R360QTH

MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.1. Size:1268K  magnachip
 mmf60r360pth.pdf

MMF60R360QTH MMF60R360QTH

MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:279K  inchange semiconductor
 mmf60r360pth.pdf

MMF60R360QTH MMF60R360QTH

isc N-Channel MOSFET Transistor MMF60R360PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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