MMF60R360QTH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMF60R360QTH
Marking Code: 60R360Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 41
nS
Cossⓘ -
Output Capacitance: 715
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
TO220F
MMF60R360QTH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMF60R360QTH
Datasheet (PDF)
..1. Size:200K inchange semiconductor
mmf60r360qth.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF60R360QTHFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersAdapterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
4.1. Size:1324K magnachip
mmf60r360q.pdf
MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
5.1. Size:1268K magnachip
mmf60r360pth.pdf
MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
5.2. Size:279K inchange semiconductor
mmf60r360pth.pdf
isc N-Channel MOSFET Transistor MMF60R360PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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