MMF60R360QTH PDF and Equivalents Search

 

MMF60R360QTH Specs and Replacement

Type Designator: MMF60R360QTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 715 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220F

MMF60R360QTH substitution

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MMF60R360QTH datasheet

 ..1. Size:200K  inchange semiconductor
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MMF60R360QTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R360QTH FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters Adapter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 4.1. Size:1324K  magnachip
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MMF60R360QTH

MMF60R360Q Datasheet MMF60R360Q 600V 0.36 N-channel MOSFET Description MMF60R360Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 5.1. Size:1268K  magnachip
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MMF60R360QTH

MMF60R360P Datasheet MMF60R360P 600V 0.36 N-channel MOSFET Description MMF60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 5.2. Size:279K  inchange semiconductor
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MMF60R360QTH

isc N-Channel MOSFET Transistor MMF60R360PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

Detailed specifications: IXFP12N65X2M, IXFP22N65X2M, IXTP24N65X2M, IXFP34N65X2, MDE1932, MDP10N055, MDP1921, MMD80R900P, P55NF06, MMF80R450PTH, MMF80R650PTH, MTP2N50, NTB082N65S3F, NTE2393, NTP082N65S3F, NTPF082N65S3F, SIHA11N80E

Keywords - MMF60R360QTH MOSFET specs

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