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SIHA11N80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHA11N80E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm
   Paquete / Cubierta: TO220F
 

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SIHA11N80E Datasheet (PDF)

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SIHA11N80E

SiHA11N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?99912

 ..2. Size:200K  inchange semiconductor
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SIHA11N80E

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SiHA11N80EFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

 9.1. Size:170K  vishay
 siha15n60e.pdf pdf_icon

SIHA11N80E

SiHA15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 76 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 17

 9.2. Size:171K  vishay
 siha12n60e.pdf pdf_icon

SIHA11N80E

SiHA12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 58 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 13 M

MOSTRAR MÁS

Otros transistores... MMF60R360QTH , MMF80R450PTH , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , 12N60 , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR .

 

 
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