SIHA11N80E Todos los transistores

 

SIHA11N80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHA11N80E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 34 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 44 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 68 pF

Resistencia drenaje-fuente RDS(on): 0.44 Ohm

Empaquetado / Estuche: TO220F

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SIHA11N80E Datasheet (PDF)

1.1. siha11n80e.pdf Size:141K _update-mosfet

SIHA11N80E
SIHA11N80E

SiHA11N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses G • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance S please see www.vishay.com/doc?99912

1.2. siha11n80e.pdf Size:200K _inchange_semiconductor

SIHA11N80E
SIHA11N80E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SiHA11N80E ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS

 5.1. siha12n60e.pdf Size:171K _upd-mosfet

SIHA11N80E
SIHA11N80E

SiHA12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 58 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 13 • M

5.2. siha15n60e.pdf Size:170K _upd-mosfet

SIHA11N80E
SIHA11N80E

SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •

 5.3. siha15n50e.pdf Size:164K _upd-mosfet

SIHA11N80E
SIHA11N80E

SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

5.4. siha12n50e.pdf Size:164K _upd-mosfet

SIHA11N80E
SIHA11N80E

SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

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