All MOSFET. SiHA11N80E Datasheet

 

SiHA11N80E MOSFET. Datasheet pdf. Equivalent

Type Designator: SiHA11N80E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 34 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.44 Ohm

Package: TO220F

SiHA11N80E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SiHA11N80E Datasheet (PDF)

1.1. siha11n80e.pdf Size:200K _inchange_semiconductor

SiHA11N80E
SiHA11N80E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SiHA11N80E ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS

5.1. siha12n60e.pdf Size:171K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 58 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 13 • M

5.2. siha15n60e.pdf Size:170K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •

 5.3. siha15n50e.pdf Size:164K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

5.4. siha12n50e.pdf Size:164K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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