All MOSFET. SIHA11N80E Datasheet

 

SIHA11N80E Datasheet and Replacement


   Type Designator: SIHA11N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search

 

SIHA11N80E Datasheet (PDF)

 ..1. Size:141K  vishay
siha11n80e.pdf pdf_icon

SIHA11N80E

SiHA11N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?99912

 ..2. Size:200K  inchange semiconductor
siha11n80e.pdf pdf_icon

SIHA11N80E

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SiHA11N80EFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

 9.1. Size:170K  vishay
siha15n60e.pdf pdf_icon

SIHA11N80E

SiHA15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 76 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 17

 9.2. Size:171K  vishay
siha12n60e.pdf pdf_icon

SIHA11N80E

SiHA12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 58 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 13 M

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SFF24N50B | CED05N8 | BUZ84 | IRFHM792PBF | RU40E25L | AON6794 | BL10N70-A

Keywords - SIHA11N80E MOSFET datasheet

 SIHA11N80E cross reference
 SIHA11N80E equivalent finder
 SIHA11N80E lookup
 SIHA11N80E substitution
 SIHA11N80E replacement

 

 
Back to Top

 


 
.