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SiHA11N80E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SiHA11N80E

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 34 W

Предельно допустимое напряжение сток-исток (Uds): 800 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 12 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.44 Ohm

Тип корпуса: TO220F

Аналог (замена) для SiHA11N80E

 

 

SiHA11N80E Datasheet (PDF)

1.1. siha11n80e.pdf Size:200K _inchange_semiconductor

SiHA11N80E
SiHA11N80E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SiHA11N80E ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS

5.1. siha12n60e.pdf Size:171K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 58 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 13 • M

5.2. siha15n60e.pdf Size:170K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •

 5.3. siha15n50e.pdf Size:164K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

5.4. siha12n50e.pdf Size:164K _upd-mosfet

SiHA11N80E
SiHA11N80E

SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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Список транзисторов

Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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