SUD25N15-52-E3 Todos los transistores

 

SUD25N15-52-E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUD25N15-52-E3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 136 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.052 Ohm

Empaquetado / Estuche: TO252

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SUD25N15-52-E3 Datasheet (PDF)

1.1. sud25n15-52.pdf Size:162K _upd

SUD25N15-52-E3
SUD25N15-52-E3

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω)ID (A) • 175 °C Junction Temperature 0.052 at VGS = 10 V 25 150 • PWM Optimized 0.060 at VGS = 6 V 23 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 • Primary Side Switch D Drain Connec

1.2. sud25n15-52-e3.pdf Size:208K _inchange_semiconductor

SUD25N15-52-E3
SUD25N15-52-E3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD25N15-52-E3 ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·D Primary Side Switch ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V

 1.3. sud25n15-52.pdf Size:192K _inchange_semiconductor

SUD25N15-52-E3
SUD25N15-52-E3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD25N15-52 ·FEATURES ·TrenchFET® Power MOSFET ·175℃ Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·D Primary Side Switch ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V

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