All MOSFET. SUD25N15-52-E3 Datasheet

 

SUD25N15-52-E3 Datasheet and Replacement


   Type Designator: SUD25N15-52-E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO252
 

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SUD25N15-52-E3 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
 sud25n15-52-e3.pdf pdf_icon

SUD25N15-52-E3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52-E3FEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 V

 3.1. Size:162K  vishay
 sud25n15-52.pdf pdf_icon

SUD25N15-52-E3

SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec

 3.2. Size:192K  inchange semiconductor
 sud25n15-52.pdf pdf_icon

SUD25N15-52-E3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52FEATURESTrenchFET Power MOSFET175 Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV

 6.1. Size:145K  vishay
 sud25n15.pdf pdf_icon

SUD25N15-52-E3

SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec

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Keywords - SUD25N15-52-E3 MOSFET datasheet

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