SUP70040E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUP70040E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 2025 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220AB

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SUP70040E datasheet

 ..1. Size:147K  vishay
sup70040e.pdf pdf_icon

SUP70040E

SUP70040E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.0040 at VGS = 10 V 120 100 76 100 % Rg and UIS tested 0.0046 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see TO-220AB

 ..2. Size:238K  inchange semiconductor
sup70040e.pdf pdf_icon

SUP70040E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP70040E FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMU

 8.1. Size:155K  vishay
sup70060e.pdf pdf_icon

SUP70040E

SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0058 at VGS = 10 V 131 100 53.5 nC 100 % Rg and UIS tested 0.0064 at VGS = 7.5 V 129 Material categorization for definitions of compliance please see TO-220A

 8.2. Size:262K  inchange semiconductor
sup70060e.pdf pdf_icon

SUP70040E

Isc N-Channel MOSFET Transistor SUP70060E FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Otros transistores... NTB082N65S3F, NTE2393, NTP082N65S3F, NTPF082N65S3F, SIHA11N80E, SKS10N20, STP30NF10FP, SUD25N15-52-E3, 2SK3878, SWHA069R10VS, TK290P60Y, VN88AFD, 2SK3262-01MR, MTY30N50E, CMP80N06, CMB80N06, CMI80N06