SUP70040E Todos los transistores

 

SUP70040E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUP70040E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 76 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 2025 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220AB

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SUP70040E Datasheet (PDF)

 ..1. Size:147K  vishay
sup70040e.pdf

SUP70040E
SUP70040E

SUP70040Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature0.0040 at VGS = 10 V 120100 76 100 % Rg and UIS tested0.0046 at VGS = 7.5 V 120 Material categorization:for definitions of compliance please see TO-220AB

 ..2. Size:238K  inchange semiconductor
sup70040e.pdf

SUP70040E
SUP70040E

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUP70040EFEATURESTrenchFET Power MOSFET175 C Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONPower Supply- Secondary Synchronous RectificationPower toolsMotor drive switchBattery managementABSOLUTE MAXIMU

 8.1. Size:155K  vishay
sup70060e.pdf

SUP70040E
SUP70040E

SUP70060Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0058 at VGS = 10 V 131100 53.5 nC 100 % Rg and UIS tested0.0064 at VGS = 7.5 V 129 Material categorization:for definitions of compliance please see TO-220A

 8.2. Size:262K  inchange semiconductor
sup70060e.pdf

SUP70040E
SUP70040E

Isc N-Channel MOSFET Transistor SUP70060EFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 9.1. Size:73K  vishay
sup70n03-09bp sub70n03-09bp.pdf

SUP70040E
SUP70040E

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

 9.2. Size:94K  vishay
sup70n06-14 sub70n06-14.pdf

SUP70040E
SUP70040E

SUP/SUB70N06-14Vishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETPRODUCT SUMMARY V(BR)DSS (V) rDS(on) ()ID (A)Pb-free60 0.014 Available70aRoHS*COMPLIANTTO-220AB DTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N06-14Top ViewN-Channel MOSFETSUP70N06-14Ordering Information: SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (P

 9.3. Size:113K  vishay
sup70n03-09p sub70n03-09p.pdf

SUP70040E
SUP70040E

SUP/SUB70N03-09PVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V "70a30300.015 @ VGS = 4.5 V "55DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09Top ViewN-Channel MOSFETSUP70N03-09ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

 9.4. Size:52K  vishay
sup70n03-09bp.pdf

SUP70040E
SUP70040E

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

 9.5. Size:71K  vishay
sup70n04-10 sub70n04-10.pdf

SUP70040E
SUP70040E

SUP/SUB70N04-10Vishay SiliconixN-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V 70400.014 @ VGS = 4.5 V 58DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N04-10Top ViewN-Channel MOSFETSUP70N04-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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