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SUP70040E Spec and Replacement


   Type Designator: SUP70040E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 2025 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220AB

 SUP70040E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP70040E Specs

 ..1. Size:147K  vishay
sup70040e.pdf pdf_icon

SUP70040E

SUP70040E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.0040 at VGS = 10 V 120 100 76 100 % Rg and UIS tested 0.0046 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see TO-220AB ... See More ⇒

 ..2. Size:238K  inchange semiconductor
sup70040e.pdf pdf_icon

SUP70040E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP70040E FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMU... See More ⇒

 8.1. Size:155K  vishay
sup70060e.pdf pdf_icon

SUP70040E

SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0058 at VGS = 10 V 131 100 53.5 nC 100 % Rg and UIS tested 0.0064 at VGS = 7.5 V 129 Material categorization for definitions of compliance please see TO-220A... See More ⇒

 8.2. Size:262K  inchange semiconductor
sup70060e.pdf pdf_icon

SUP70040E

Isc N-Channel MOSFET Transistor SUP70060E FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒

Detailed specifications: NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , IRLB4132 , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E , CMP80N06 , CMB80N06 , CMI80N06 .

Keywords - SUP70040E MOSFET specs

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