BUK437-500A Todos los transistores

 

BUK437-500A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK437-500A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO247

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BUK437-500A Datasheet (PDF)

1.1. buk437-500a b.pdf Size:195K _update-mosfet

BUK437-500A
BUK437-500A

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

1.2. buk437-500b.pdf Size:213K _inchange_semiconductor

BUK437-500A
BUK437-500A

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK437-500B ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

 5.1. buk436w-200a-b 1.pdf Size:54K _philips

BUK437-500A
BUK437-500A

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (SMPS), mo

5.2. buk436w-800a-b 1.pdf Size:54K _philips

BUK437-500A
BUK437-500A

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS), mo

 5.3. buk436w-1000b 1.pdf Size:53K _philips

BUK437-500A
BUK437-500A

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation 125 W (SMPS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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