BUK437-500A Datasheet. Equivalente

 ..1. Size:195K  philips
 buk437-500a b.pdf

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 4.1. Size:213K  inchange semiconductor
 buk437-500b.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK437-500B FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:53K  philips
 buk436w-1000b 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation 125 W (S

 9.2. Size:54K  philips
 buk436w-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (SMPS),

 9.3. Size:54K  philips
 buk436w-800a-b 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS),

 9.4. Size:236K  inchange semiconductor
 buk436-800ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl

 9.5. Size:235K  inchange semiconductor
 buk436-100ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl

 9.6. Size:235K  inchange semiconductor
 buk438-500ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK438-500A/B DESCRIPTION Drain Source Voltage- V =500V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl

 9.7. Size:235K  inchange semiconductor
 buk436-60ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applic

 9.8. Size:235K  inchange semiconductor
 buk436-200ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl