BUK437-500A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK437-500A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO247
BUK437-500A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK437-500A Datasheet (PDF)
1.1. buk437-500a b.pdf 
Size:195K _update-mosfet
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1.2. buk437-500b.pdf Size:213K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK437-500B ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25
5.1. buk436w-200a-b 1.pdf Size:54K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (SMPS), mo
5.2. buk436w-800a-b 1.pdf Size:54K _philips
Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS), mo
5.3. buk436w-1000b 1.pdf Size:53K _philips
Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation 125 W (SMPS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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