All MOSFET. BUK437-500A Datasheet

 

BUK437-500A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK437-500A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO247

 BUK437-500A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK437-500A Datasheet (PDF)

 ..1. Size:195K  philips
buk437-500a b.pdf

BUK437-500A BUK437-500A

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 4.1. Size:213K  inchange semiconductor
buk437-500b.pdf

BUK437-500A BUK437-500A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK437-500BFEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:53K  philips
buk436w-1000b 1.pdf

BUK437-500A BUK437-500A

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 3.1 ASwitched Mode Power Supplies Ptot Total power dissipation 125 W(S

 9.2. Size:54K  philips
buk436w-200a-b 1.pdf

BUK437-500A BUK437-500A

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),

 9.3. Size:54K  philips
buk436w-800a-b 1.pdf

BUK437-500A BUK437-500A

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 4 3.5 A(SMPS),

 9.4. Size:236K  inchange semiconductor
buk436-800ab.pdf

BUK437-500A BUK437-500A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 9.5. Size:235K  inchange semiconductor
buk436-100ab.pdf

BUK437-500A BUK437-500A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 9.6. Size:235K  inchange semiconductor
buk438-500ab.pdf

BUK437-500A BUK437-500A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK438-500A/BDESCRIPTIONDrain Source Voltage-: V =500V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 9.7. Size:235K  inchange semiconductor
buk436-60ab.pdf

BUK437-500A BUK437-500A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applic

 9.8. Size:235K  inchange semiconductor
buk436-200ab.pdf

BUK437-500A BUK437-500A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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