NTHD3101FT3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTHD3101FT3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.7 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: CHIPFET

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NTHD3101FT3 datasheet

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NTHD3101FT3

NTHD3101F Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics 64 mW @ -4.5 V -20 V -4.4 A Indepe

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NTHD3101FT3

NTHD3101F Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics V(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E

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NTHD3101FT3

AND PIN A NTHD3100C Power MOSFET 20 V, +3.9 A /-4.4 A, Complementary ChipFETt Features http //onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics 58 mW @ 4.5 V N-Channel Trench P-Channel for Low On Resistance 3.9 A 20 V 77 mW @ 2

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NTHD3101FT3

NTHD3102C Power MOSFET Complementary, 20 V, +5.5 A /-4.2 A, ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics ID MAX V(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve

MOSTRAR MÁS

Otros transistores... NTGS3446T1, NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, NTHD2110TT1G, NTHD3101FT1G, RFP50N06, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1, NTHS2101PT1G, NTHS4101PT1G