NTHD3101FT3 Datasheet. Specs and Replacement
Type Designator: NTHD3101FT3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.7 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: CHIPFET
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NTHD3101FT3 substitution
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NTHD3101FT3 datasheet
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NTHD3102C Power MOSFET Complementary, 20 V, +5.5 A /-4.2 A, ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics ID MAX V(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve ... See More ⇒
Detailed specifications: NTGS3446T1, NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, NTHD2110TT1G, NTHD3101FT1G, RFP50N06, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1, NTHS2101PT1G, NTHS4101PT1G
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