NTHD3133PFT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTHD3133PFT1G 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11.7 nS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: CHIPFET
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NTHD3133PFT1G datasheet
nthd3133pf nthd3133pft1g.pdf
NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics 64 mW @ -4.5 V -20 V -4.4 A Indep
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NTHD3101F Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics 64 mW @ -4.5 V -20 V -4.4 A Indepe
nthd3101f.pdf
NTHD3101F Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics V(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E
nthd3100c.pdf
AND PIN A NTHD3100C Power MOSFET 20 V, +3.9 A /-4.4 A, Complementary ChipFETt Features http //onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics 58 mW @ 4.5 V N-Channel Trench P-Channel for Low On Resistance 3.9 A 20 V 77 mW @ 2
Otros transistores... NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, NTHD2110TT1G, NTHD3101FT1G, NTHD3101FT3, SI2302, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1, NTHS2101PT1G, NTHS4101PT1G, NTHS4111PT1G
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