NTHD3133PFT1G Datasheet. Specs and Replacement
Type Designator: NTHD3133PFT1G 📄📄
Marking Code: DA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
Qg ⓘ - Total Gate Charge: 7.4 nC
tr ⓘ - Rise Time: 11.7 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: CHIPFET
NTHD3133PFT1G substitution
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NTHD3133PFT1G datasheet
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Detailed specifications: NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, NTHD2110TT1G, NTHD3101FT1G, NTHD3101FT3, SI2302, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1, NTHS2101PT1G, NTHS4101PT1G, NTHS4111PT1G
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