NTHS4501NT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTHS4501NT1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 137 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: CHIPFET

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NTHS4501NT1 datasheet

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NTHS4501NT1

NTHS4501N Power MOSFET 30 V, 6.7 A, Single N-Channel, ChipFETt Package Features http //onsemi.com Planar Technology Device Offers Low RDS(on) and Fast Switching Speed in a ChipFET Package Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. V(BR)DSS RDS(on) Typ ID Max Ideal Device for Applications Where Board Space is at a Premium. 30 mW @ 10 V ChipFET Packag

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NTHS4501NT1

NTHS4111P Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

 9.2. Size:84K  onsemi
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NTHS4501NT1

NTHS4166N Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFETt Package Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities 22 mW @ 10 V This is a Pb-Free Device 30 V 8.2 A 27 mW @ 4.5 V Applications

 9.3. Size:59K  onsemi
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NTHS4501NT1

NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http //onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (

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