NTHS4501NT1
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTHS4501NT1
Marking Code: D2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 4.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.1
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 137
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038
Ohm
Package: CHIPFET
NTHS4501NT1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTHS4501NT1
Datasheet (PDF)
..1. Size:60K onsemi
nths4501n-d nths4501nt1 nths4501nt1g.pdf 
NTHS4501NPower MOSFET30 V, 6.7 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Planar Technology Device Offers Low RDS(on) and Fast Switching Speedin a ChipFET Package Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6.V(BR)DSS RDS(on) Typ ID MaxIdeal Device for Applications Where Board Space is at a Premium.30 mW @ 10 V ChipFET Packag
9.1. Size:193K onsemi
nths4111pt1g.pdf
NTHS4111PPower MOSFET-30 V, -6.1 A, Single P-Channel, ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (
9.2. Size:84K onsemi
nths4166n nths4166nt1g.pdf
NTHS4166NPower MOSFET30 V, 8.2 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities22 mW @ 10 V This is a Pb-Free Device30 V 8.2 A27 mW @ 4.5 VApplications
9.3. Size:59K onsemi
nths4101p-d.pdf
NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (
9.4. Size:118K onsemi
nths4101p.pdf
NTHS4101PMOSFET Power,P-Channel, ChipFET-20 V, 6.7 AFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAXPremium21 mW @ -4.5 V Low Profile (
9.5. Size:122K onsemi
nths4101pt1g.pdf
NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (
Datasheet: AM3401
, AM3402N
, AM3403P
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, AM3406N
, AM3407
, AM3407PE
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, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
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